Registration starts at 21st May 2012
Scope (short)

ISSLED 2012 will cover the entire spectrum of GaN-, ZnSe-, and ZnO- based semiconductors and their optoelectronic properties and applications, spanning from growth and substrate-epilayer constraints, over heterostructures and doping, to device physics, processing and reliability.
Topics to be discussed include, but are not limited to:

  • Growth and characterization of advanced wide bandgap semiconductors
    (GaN, ZnSe, ZnO, organic materials)
  • Non-polar and semi-polar materials
  • On Si Substrate
  • Device Design and Fabrication
  • Optoelectronic Properties
  • White Light Emitting Diodes
  • (deep) Ultraviolet Emitters and Detectors
  • Green LDs
  • Nanocolumn LEDs
  • Micro LEDs
  • GaN:RE LEDs
  • Device Performance and Reliability
  • Droop Phenomena
  • Novel Optoelectronic Devices and Applications
  • Photonics and Plasmonics

  • Plenary Speakers (confirmed)

  • Yasuhiko Arakawa (University of Tokyo)
  • Pallab Bhattacharya (University of Michigan)
  • Steve Denbaars (UC Santa Barbara)
  • Asif Khan (University of South Carolina)
  • Alois Krost (Otto-von-Guericke-University Magdeburg)

  • Invited Speakers (confirmed)

  • Raphael Butte (EPFL)
  • Jean-Michel Chauveau (CNRS/CRHEA)
  • Martin D. Dawson (University of Strathclyde)
  • Thierry Guillet (Université de Montpellier II)
  • Michael Heuken (Aixtron SE)
  • Noble Johnson (PARC)
  • Taek Kim (Samsung Electronics)
  • Katsumi Kishino (Sophia University)
  • Seong Ju Park (GIST)
  • Czeslaw Skierbiszewski (Unipress)
  • Uwe Strauss (Osram OS)
  • Xinqiang Wang (Peking University)
  • Chih Chung Yang (National Taiwan University)