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Scope (short)
ISSLED 2012 will cover the entire spectrum of GaN-, ZnSe-, and ZnO- based semiconductors and their optoelectronic properties and applications, spanning from growth and substrate-epilayer constraints, over heterostructures and doping, to device physics, processing and reliability.
Topics to be discussed include, but are not limited to:
Growth and characterization of advanced wide bandgap semiconductors
(GaN, ZnSe, ZnO, organic materials)
Non-polar and semi-polar materials
On Si Substrate
Device Design and Fabrication
Optoelectronic Properties
White Light Emitting Diodes
(deep) Ultraviolet Emitters and Detectors
Green LDs
Nanocolumn LEDs
Micro LEDs
GaN:RE LEDs
Device Performance and Reliability
Droop Phenomena
Novel Optoelectronic Devices and Applications
Photonics and Plasmonics
Plenary Speakers (confirmed)
Yasuhiko Arakawa (University of Tokyo)
Pallab Bhattacharya (University of Michigan)
Steve Denbaars (UC Santa Barbara)
Asif Khan (University of South Carolina)
Alois Krost (Otto-von-Guericke-University Magdeburg)
Invited Speakers (confirmed)
Raphael Butte (EPFL)
Jean-Michel Chauveau (CNRS/CRHEA)
Martin D. Dawson (University of Strathclyde)
Thierry Guillet (Université de Montpellier II)
Michael Heuken (Aixtron SE)
Noble Johnson (PARC)
Taek Kim (Samsung Electronics)
Katsumi Kishino (Sophia University)
Seong Ju Park (GIST)
Czeslaw Skierbiszewski (Unipress)
Uwe Strauss (Osram OS)
Xinqiang Wang (Peking University)
Chih Chung Yang (National Taiwan University)
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